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| DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES * * * Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre = 0.4 pF TYP. PACKAGE DIMENSIONS in millimeters 2.1 0.1 1.25 0.1 2.0 0.2 0.3 +0.1 -0 0.65 0.65 ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE Embossed tape 8 mm wide. Pin3 (Collector) face to perforation side of the tape. Embossed tape 8 mm wide. Pin1 (Emitter), Pin2 (Base) face to perforation side of the tape. 2 0.3 +0.1 -0 0.15 +0.1 -0.05 1 3 2SC4959-T1 3 Kpcs/Reel. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959) 0.9 0.1 2SC4959-T2 3 Kpcs/Reel. 0.3 Marking ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 9 6 2 30 150 150 -65 to +150 V V V mA mW C C PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Caution; Electrostatic sensitive Device. Document No. P10382EJ2V0DS00 (2nd edition) (Previous No. TD-2410) Date Published July 1995 P Printed in Japan The mark 5 shows revised points. 0 to 0.1 (c) 1995 1992 2SC4959 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure *1 *2 SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF 7 75 12 0.4 8.5 1.5 2.5 0.7 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA*1 VCE = 3 V, IC = 10 mA, f = 2.0 GHz VCB = 3 V, IE = 0, f = 1 MHz*2 VCE = 3 V, IC = 10 mA, f = 2.0 GHz VCE = 3 V, IC = 3 mA, f = 2.0 GHz A A Pulse Measurement ; PW 350 s, Duty Cycle 2 % Pulsed. Measured with 3 terminals bridge, Emitter and Case should be grounded. hFE Classification Rank Marking hFE T83 T83 75 to 150 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs.AMBIENT TEMPERATURE 50 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V PT - Total Power Dissipation - mW Free Air 200 IC - Collector Current - mA 50 100 150 40 30 100 20 10 0 0 0.5 VBE - Base to Emitter Voltage - V 1.0 TA - Ambient Temperature - C 2 2SC4959 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 m A 50 40 300 m A 30 200 m A 20 A IB = 100 m 10 0 0.1 0.2 200 DC CURRENT GAIN vs. COLLECTOR CURRENT IC - Collector Current - mA 400 m A hFE - DC Current Gain 5V VCE = 3 V 100 0 1 2 3 4 5 6 0.5 1 2 5 10 20 50 100 VCE - Collector to Emitter Voltage - V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 f = 2 GHz 10 IC - Collector Current - mA INSERTION POWER GAIN vs. COLLECTOR CURRENT f = 2 GHz fT - Gain Bandwidth Product - GHz 12 10 8 6 4 2 0.5 - Insertion Power Gain - dB 5V 3V 5V 8 3V VCE = 1 V VCE = 1 V 6 4 S21e 2 1 2 5 10 20 50 1 2 5 10 20 50 IC - Collector Current - mA IC - Collector Current - mA NOISE FIGURE vs. COLLECTOR CURRENT 4 0.6 2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Cre - Feed-back Capacitance - pF f = 2 GHz VCE = 3 V f = 1 MHz 0.5 NF - Noise Figure - dB 3 2 0.4 1 0.3 0 0.5 1 2 5 10 20 50 0.2 0.5 1 2 5 10 20 IC - Collector Current - mA VCB - Collector to Base Voltage - V 3 2SC4959 S-PARAMETER (VCE = 3 V, IC = 1 mA, ZO = 50 ) f (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.9340 0.9040 0.8150 0.7530 0.6540 0.5900 0.5160 0.4590 0.4230 0.3670 0.3370 0.3150 0.3080 0.2930 0.2950 S11 ANG -15.7 -29.4 -43.4 -56.6 -68.9 -79.8 -90.1 -101.5 -110.8 -123.9 -136.7 -145.5 -159.1 -164.8 -179.6 MAG 3.5100 3.3520 3.1060 2.8840 2.6050 2.4490 2.2610 2.0780 1.9250 1.8700 1.7790 1.6600 1.5690 1.5190 1.4610 S21 ANG 164.8 150.7 138.0 126.3 115.1 105.4 96.8 89.4 83.7 76.3 69.9 64.1 59.4 55.3 50.7 MAG 0.0450 0.0780 0.1140 0.1370 0.1490 0.1660 0.1770 0.1780 0.1880 0.1900 0.2110 0.2140 0.2070 0.2140 0.2260 S12 ANG 82.6 68.0 62.8 58.0 55.2 45.4 44.8 45.1 42.5 41.9 43.9 41.9 42.8 45.8 45.4 MAG 0.9850 0.9410 0.8960 0.8260 0.7830 0.7220 0.6790 0.6430 0.6290 0.5880 0.5630 0.5520 0.5450 0.5220 0.4960 S22 ANG -8.7 -17.1 -23.6 -29.9 -34.7 -38.0 -42.0 -45.2 -46.8 -51.4 -54.3 -57.0 -59.2 -64.5 -61.3 (VCE = 3 V, IC = 3 mA, ZO = 50 ) f (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.8020 0.6780 0.5440 0.4430 0.3540 0.2930 0.2360 0.2000 0.1820 0.1480 0.1370 0.1340 0.1640 0.1500 0.1780 S11 ANG -25.9 -45.8 -62.8 -75.7 -87.3 -99.7 -108.4 -121.0 -129.5 -151.7 -166.1 175.2 169.7 170.9 147.7 MAG 8.8990 7.4880 6.1260 5.1230 4.3050 3.7880 3.3560 3.0100 2.6960 2.5340 2.3820 2.1870 2.0530 1.9660 1.8710 S21 ANG 154.2 134.4 119.6 108.1 99.1 91.3 84.8 79.1 74.4 69.4 64.0 60.0 55.8 53.0 49.6 MAG 0.0370 0.0760 0.0860 0.1050 0.1210 0.1330 0.1440 0.1570 0.1760 0.1940 0.2150 0.2130 0.2410 0.2490 0.2750 S12 ANG 67.2 65.6 60.9 58.4 55.9 61.2 55.4 56.2 58.0 56.1 56.3 57.8 57.6 55.2 56.6 MAG 0.9420 0.8040 0.7060 0.6250 0.5660 0.5190 0.4950 0.4660 0.4560 0.4310 0.4050 0.3990 0.3950 0.3750 0.3740 S22 ANG -15.7 -26.6 -33.2 -36.6 -38.3 -41.4 -43.9 -44.5 -44.5 -48.8 -51.9 -52.8 -52.9 -59.2 -60.8 4 2SC4959 S-PARAMETER (VCE = 3 V, IC = 5 mA, ZO = 50 ) f (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.6900 0.5360 0.4010 0.3150 0.2360 0.1850 0.1440 0.1230 0.1040 0.1000 0.1110 0.1040 0.1180 0.1190 0.1490 S11 ANG -33.3 -54.7 -70.0 -82.4 -93.8 -105.4 -115.8 -134.4 -144.6 -170.6 167.4 158.2 156.3 150.0 142.4 MAG 12.2960 9.4300 7.2390 5.8220 4.7830 4.1700 3.6410 3.2380 2.8910 2.7040 2.5330 2.3270 2.1850 2.0910 1.9760 S21 ANG 147.1 125.5 111.3 101.1 93.4 86.4 80.7 76.1 71.4 67.3 62.6 58.7 54.9 52.6 49.0 MAG 0.0320 0.0610 0.0700 0.0950 0.1090 0.1260 0.1350 0.1560 0.1770 0.1930 0.2080 0.2260 0.2560 0.2560 0.2860 S12 ANG 74.8 66.3 59.6 63.8 62.3 61.9 65.9 61.2 62.4 60.7 60.6 61.6 58.2 56.8 56.6 MAG 0.8850 0.7210 0.6030 0.5230 0.4870 0.4600 0.4360 0.4170 0.4020 0.3940 0.3710 0.3500 0.3560 0.3520 0.3410 S22 ANG -19.7 -30.3 -34.5 -36.7 -38.0 -38.8 -40.4 -42.6 -43.9 -45.8 -50.3 -50.2 -51.2 -58.1 -56.9 (VCE = 3 V, IC = 10 mA, ZO = 50 ) f (GHz) 0.200 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 2.000 2.200 2.400 2.600 2.800 3.000 MAG 0.5080 0.3410 0.2320 0.1770 0.1220 0.1010 0.0670 0.0620 0.0660 0.0770 0.0990 0.1140 0.1260 0.1020 0.1370 S11 ANG -43.6 -65.3 -80.7 -90.8 -108.2 -121.8 -138.2 -167.6 -171.3 146.7 146.5 128.1 136.8 129.6 123.5 MAG 17.0900 11.3980 8.2250 6.3950 5.1870 4.4390 3.8770 3.4350 3.0650 2.8540 2.6590 2.4400 2.2790 2.1950 2.0800 S21 ANG 135.9 114.2 102.0 93.8 87.2 81.6 76.9 72.4 68.8 65.0 60.5 57.0 53.5 50.9 47.9 MAG 0.0330 0.0520 0.0690 0.0880 0.1060 0.1260 0.1450 0.1590 0.1790 0.2060 0.2220 0.2420 0.2660 0.2770 0.2860 S12 ANG 63.8 68.5 69.0 71.6 69.3 70.1 70.5 65.5 65.0 63.9 62.8 60.9 59.9 59.6 58.3 MAG 0.7930 0.5910 0.5130 0.4480 0.4180 0.4030 0.3930 0.3680 0.3610 0.3480 0.3360 0.3370 0.3170 0.3280 0.3100 S22 ANG -26.2 -32.9 -32.9 -32.8 -35.9 -33.3 -36.5 -36.2 -39.5 -42.3 -46.6 -48.8 -47.2 -55.1 -51.2 5 2SC4959 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 6 This datasheet has been download from: www..com Datasheets for electronics components. |
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